TK11P65W

MOSFETs Silicon N-Channel MOS (DTMOS) TK11P65W 1. Applications Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.45 mA) 3. Packaging and Internal Circuit TK11P65W DPAK 1: Gate 2: Drain (Heatsink) 3: Source Start of commercial production 2014-05 1 2014-09-17 Rev.3.0 TK11P65W 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 650 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 11.1 A Drain current (pulsed) (Note 1) IDP 44.4 Power dissipation (Tc = 25) PD 100 W Single-pulse avalanche energy (Note 2) EAS 138 mJ Avalanche current IAR 2.8 A Reverse drain current (DC) (Note 1) IDR 11.1 Reverse drain current (pulsed) (Note 1) IDRP 44.4 Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook...