N-Channel MOSFET. TK9P65W Datasheet

TK9P65W MOSFET. Datasheet pdf. Equivalent


Part TK9P65W
Description N-Channel MOSFET
Feature MOSFETs Silicon N-Channel MOS (DTMOS) TK9P65W 1. Applications • Switching Voltage Regulators 2. Fea.
Manufacture Toshiba
Datasheet
Download TK9P65W Datasheet


isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source TK9P65W Datasheet
MOSFETs Silicon N-Channel MOS (DTMOS) TK9P65W 1. Applicatio TK9P65W Datasheet
Recommendation Recommendation Datasheet TK9P65W Datasheet




TK9P65W
MOSFETs Silicon N-Channel MOS (DTMOS)
TK9P65W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.46 (typ.)
by using Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.5 to 3.5 V(VDS = 10 V, ID = 0.35 mA)
3. Packaging and Internal Circuit
TK9P65W
1: Gate
2: Drain (Heatsink)
3: Source
DPAK
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
650
V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
9.3
A
Drain current (pulsed)
(Note 1)
IDP
37.2
Power dissipation
(Tc = 25 )
PD
80
W
Single-pulse avalanche energy
(Note 2)
EAS
116
mJ
Avalanche current
IAR
2.4
A
Reverse drain current (DC)
(Note 1)
IDR
9.3
Reverse drain current (pulsed)
(Note 1)
IDRP
37.2
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
©2015 Toshiba Corporation
1
Start of commercial production
2014-09
2015-12-25
Rev.4.0



TK9P65W
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: VDD = 90 V, Tch = 25 (initial), L = 35.8 mH, RG = 25 , IAR = 2.4 A
TK9P65W
Symbol
Rth(ch-c)
Max
Unit
1.57
/W
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2015 Toshiba Corporation
2
2015-12-25
Rev.4.0







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