N-Channel MOSFET. IXTA200N085T Datasheet

IXTA200N085T MOSFET. Datasheet pdf. Equivalent


Part IXTA200N085T
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=1.
Manufacture INCHANGE
Datasheet
Download IXTA200N085T Datasheet


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IXTA200N085T
isc N-Channel MOSFET Transistor
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤ 5.0m@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converters
·High Current Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
85
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
200
IDM
Drain Current-Single Pulsed
540
PD
Total Dissipation @TC=25
480
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Junction-to-case thermal resistance
MAX
0.31
UNIT
/W
IXTA200N085T
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IXTA200N085T
isc N-Channel MOSFET Transistor
IXTA200N085T
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS= 0V; ID = 250μA
85
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID = 250μA
2.0
4.0
V
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 25A
5.0
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS=0V
±200
nA
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
VDS= VDSS; VGS= 0V
VDS= VDSS; VGS= 0V;TJ= 150
IF= 25A; VGS = 0V
5
μA
250
1.0
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark







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