isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Sta...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-220F packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
40
V
VGSS
Gate-Source Voltage
±15
V
ID
Drain Current-Continuous@Tc=25℃ Tc=100℃
230 160
A
IDM
Drain Current-Single Pulsed
700
A
PD
Total Dissipation
40
W
Tj
Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 3.75
UNIT ℃/W
IXTA230N04T4
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA
VGS(th)
Gate Threshold Voltage
VDS=5V; ID=0.25mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=110A
IGSS
Gate-Source Leakage Current
VGS=±15V;VDS= 0V
IDSS
Drain-Source Leakage Current
VDS= 40V; VGS= 0V;
VSDF
Diode forward voltage
ISD=100A, VGS = 0 V
IXTA230N04T4
MIN TYP MAX UNIT
40
V
2.0
4.0
V
2.9
mΩ
±0.2 μA
5
μA
1.4
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without ...
