Power MOSFET
Preliminary Technical Information
Trench Gate
IXTC96N25T
Power MOSFET
(Electrically Isolated Back Surface)
VDSS = I...
Description
Preliminary Technical Information
Trench Gate
IXTC96N25T
Power MOSFET
(Electrically Isolated Back Surface)
VDSS = ID25 =
RDS(on) ≤
250V 40A 31mΩ
N-Channel Enhancement Mode Avalanche Rated
ISOPLUS220 (IXTC) E153432
Symbol VDSS VDGR VGSM ID25 IDM IAS EAS PD TJ TJM Tstg TL TSOLD VISOL FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient
Maximum Ratings
250
V
250
V
± 30
V
TC = 25°C TC = 25°C, pulse width limited by TJM
40
A
230
A
TC = 25°C TC = 25°C
5
A
2
J
TC = 25°C
147
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds
300
°C
260
°C
50/60Hz, t = 1 minute, IISOL < 1mA, RMS
2500
Mounting force
11..65 / 2.5..14.6
V N/lb.
2
g
G DS
Isolated back surface
G = Gate S = Source
D = Drain
Features
z Silicon chip on Direct-Copper-Bond substrate
z Isolated mounting surface z 2500V electrical isolation z Low drain to tab capacitance (< 30pF)
Advantages
z Easy assembly z Space savings z High power density
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 48A, Note 1
Characteristic Values Min. Typ. Max.
250
V
3
5V
± 200 nA
5 μA 250 μA
27
31 mΩ
Applications
z DC-DC converters z Battery chargers z Switched-mode and resonant-mode
power supplies z DC choppers z AC motor control z Unint...
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