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IXTP160N04T2

IXYS

Power MOSFET

TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N04T2 IXTP160N04T2 Symbol VDSS VDGR VGSM ID2...


IXYS

IXTP160N04T2

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Description
TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N04T2 IXTP160N04T2 Symbol VDSS VDGR VGSM ID25 IL(RMS) IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Transient 40 V 40 V 20 V TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 160 120 400 80 600 250 -55 ... +175 175 -55 ... +175 A A A A mJ W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 250A IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 50A, Notes 1 & 2 Characteristic Values Min. Typ. Max. 40 V 2.0 4.0 V            100 nA 5 A 150 A 5 m VDSS = ID25 =  RDS(on) 40V 160A 5m TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  Avalanche Rated  Low Package Inductance  Fast Intrinsic Rectifier 175°C Operating Temperature  High Current Handling Capability  ROHS Compliant  High Performance Trench Technology for extremely low RDS(on) Advantages  High Power Density  Easy to Moun...




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