Power MOSFET. IXTP160N04T2 Datasheet

IXTP160N04T2 MOSFET. Datasheet pdf. Equivalent


Part IXTP160N04T2
Description Power MOSFET
Feature TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA160N04T2 IXTP160N04T2 Symbo.
Manufacture IXYS
Datasheet
Download IXTP160N04T2 Datasheet


TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche IXTP160N04T2 Datasheet
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Recommendation Recommendation Datasheet IXTP160N04T2 Datasheet




IXTP160N04T2
TrenchT2TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA160N04T2
IXTP160N04T2
Symbol
VDSS
VDGR
VGSM
ID25
IL(RMS)
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25C to 175C
TJ = 25C to 175C, RGS = 1M
Transient
40
V
40
V
20
V
TC = 25C
External Lead Current Limit
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
160
120
400
80
600
250
-55 ... +175
175
-55 ... +175
A
A
A
A
mJ
W
C
C
C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263)
Mounting Torque (TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
TO-263
TO-220
2.5
g
3.0
g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250A
VGS(th)
VDS = VGS, ID = 250A
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 150C
RDS(on)
VGS = 10V, ID = 50A, Notes 1 & 2
Characteristic Values
Min. Typ. Max.
40
V
2.0
4.0 V
           100 nA
5 A
150 A
5 m
VDSS =
ID25 =
RDS(on)
40V
160A
5m
TO-263 (IXTA)
G
S
D (Tab)
TO-220 (IXTP)
G
DS
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
Features
International Standard Packages
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
175°C Operating Temperature
High Current Handling Capability
ROHS Compliant
High Performance Trench
Technology for extremely low RDS(on)
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Automotive Engine Control
Synchronous Buck Converter
(for Notebook SystemPower &
General Purpose Point & Load)
DC/DC Converters
High Current Switching Applications
Power Train Management
Distributed Power Architecture
© 2018 IXYS CORPORATION, All Rights Reserved
DS100052A(7/18)



IXTP160N04T2
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
gfs
VDS = 10V, ID = 60A, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 20V, ID = 80A
RG = 5(External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 VDSS, ID = 0.5 IDSS
Qgd
RthJC
RthCS
TO-220
Characteristic Values
Min. Typ. Max.
38
62
S
4640
pF
820
pF
145
pF
10
ns
27
ns
19
ns
16
ns
79
nC
19
nC
20
nC
0.60 C/W
0.50
C/W
IXTA160N04T2
IXTP160N04T2
TO-263 Outline
E
A
C2
E1
L1
D
L2
123
D1
H
4
A1
b2
b
A2
1 - Gate
2,4 - Drain
3 - Source
L3
c
0
e
e
0.43 [11.0]
0.66 [16.6]
0.34 [8.7]
0.20 [5.0]
60.12 [3.0]
0.10 [2.5]
0.06 [1.6]
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = 80A, VGS = 0V, Note 1
trr
IRM
QRM
IF = 80A, VGS = 0V,
-di/dt = 100A/s, VR = 20V
Characteristic Values
Min. Typ. Max.
160 A
640 A
1.3 V
40
ns
1.8
A
35
nC
Notes: 1. Pulse test, t 300s; duty cycle, d  2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
TO-220 Outline
E
A
oP
A1
Q
H1
D
D2
D1
E1
EJECTOR
PIN
A2
L1
L
ee
ee1 1
c
3X b
3X b2
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537







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