IXTC200N10T

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.3mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 101 IDM Drain Current-Single Pulsed 500 PD Total Dissipation @TC=25℃ 160 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.96 UNIT ℃/W IXTC200N10T isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS= 0V; ID = 250μA VGS(th) Gate Threshold Voltage VDS= VGS; ID = 250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID= 50A IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 150℃ IF= 50A; VGS = 0V IXTC200N10T MIN MAX UNIT 100 V 2.5 4.5 V 6.3 mΩ ±200 nA 5 μA 250 1 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The inform...