isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
:...
isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.4Ω(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
800
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
6
A
IDM
Drain Current-Single Plused
24
A
PD
Total Dissipation @TC=25℃
180
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.7
UNIT ℃/W
IXTH6N80A
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
IXTH6N80A
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=250uA
800
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 250uA
2
4.5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 3A
1.4
Ω
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Diode Forward On-voltage
VGS= ±20V;VDS= 0
VDS=640V; VGS= 0 VDS=640V; VGS= 0;TJ=125℃
IF= 6A ;VGS= 0
±100 nA
250 1000
µA
1.5
V
NOTICE： ISC reserves the righ...
