isc N-Channel MOSFET Transistor
FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Stati...
isc N-Channel MOSFET
Transistor
FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.95Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
Drain-Source Voltage
VGS
Gate-Source Voltage-Continuous
ID
Drain Current-Continuous
IDM
Drain Current-Single Pluse
PD
Total Dissipation @TC=25℃
TJ
Max. Operating Junction Temperature
Tstg
Storage Temperature
VALUE UNIT
800
V
±20
V
11
A
44
A
300
W
-55~150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.42
UNIT ℃/W
IXTH11N80
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 250µA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 5.5A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS=±20V;VDS= 0
VDS= 640V; VGS= 0 VDS= 640V; VGS= 0;TJ=125℃
IS= 11A; VGS= 0
IXTH11N80
MIN MAX UNIT
800
V
2
4.5
V
0.95
Ω
±100 nA
250 1000
µA
1.5
V
NOTICE: ISC reserves the righ...