isc N-Channel MOSFET Transistor
·FEATURES ·With TO-247 packaging ·High speed switching ·Standard level gate drive ·Easy...
isc N-Channel MOSFET
Transistor
·FEATURES ·With TO-247 packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Power supply ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS Drain-Source Voltage
500
V
VGSS Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
24
A
IDM
Drain Current-Single Pulsed
96
A
PD
Total Dissipation
360
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 0.35
UNIT ℃/W
IXTH24N50Q
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isc N-Channel MOSFET
Transistor
IXTH24N50Q
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA
500
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=0.25mA
2.5
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=12A
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±20V;VDS= 0V
VDS= 500V; VGS= 0; VDS= 500V; VGS= 0;TJ=125℃
ISD=24A, VGS = 0 V
V
4.5
V
240
mΩ
±0.1 μA
25 1000
μA
1.5
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The inform...
