IGBT. BSM50GD120DN2G Datasheet

BSM50GD120DN2G IGBT. Datasheet pdf. Equivalent


Part BSM50GD120DN2G
Description IGBT
Feature BSM 50 GD 120 DN2G IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-whe.
Manufacture eupec
Datasheet
Download BSM50GD120DN2G Datasheet


BSM 50 GD 120 DN2G IGBT Power Module Preliminary data • Pow BSM50GD120DN2G Datasheet
BSM 50 GD 120 DN2G IGBT Power Module • Power module • 3-pha BSM50GD120DN2G Datasheet
Recommendation Recommendation Datasheet BSM50GD120DN2G Datasheet




BSM50GD120DN2G
BSM 50 GD 120 DN2G
IGBT Power Module
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 50 GD 120 DN2G
VCE IC
1200V 78A
Package
ECONOPACK 3
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 k
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 80 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Power dissipation per IGBT
TC = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VCE
VCGR
VGE
IC
ICpuls
Ptot
Tj
Tstg
RthJC
RthJCD
Vis
-
-
-
-
Ordering Code
C67070-A2521-A67
Values
Unit
1200
V
1200
± 20
A
78
50
156
100
W
400
+ 150
°C
-40 ... + 125
0.35
K/W
0.7
2500
Vac
16
mm
11
F
sec
40 / 125 / 56
1
Oct-01-2003



BSM50GD120DN2G
BSM 50 GD 120 DN2G
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 2 mA
4.5
5.5
6.5
Collector-emitter saturation voltage
VCE(sat)
VGE = 15 V, IC = 50 A, Tj = 25 °C
-
2.5
3
VGE = 15 V, IC = 50 A, Tj = 125 °C
-
3.1
3.7
Zero gate voltage collector current
ICES
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
-
0.8
1
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
-
4
-
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
-
-
200
AC Characteristics
Transconductance
VCE = 20 V, IC = 50 A
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
gfs
23
Ciss
-
Coss
-
Crss
-
-
-
3300 -
500
-
220
-
Unit
V
mA
nA
S
pF
2
Oct-01-2003







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