IXTH50P085

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 55mΩ@VGS= -10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·Uninterruptible power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -85 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -50 A IDM Drain Current-Single Pulsed -200 A PD Total Dissipation @TC=25℃ 300 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.42 UNIT ℃/W IXTH50P085 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor IXTH50P085 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS= 0V; ID = -250μA -85 V VGS(th) Gate Threshold Voltage VDS= VGS; ID = -250uA -3 -5 V RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -25A 55 mΩ IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VSD Diode forward voltage VGS= ±20V;VDS=0V VDS= -68V; VGS= 0V VDS= -68V; VGS= 0V;TJ = 125°C IF= -25A; VGS = 0V ±100 nA -25 -1000 μA -3 V NOTICE： ISC reserves the rights to make changes of the conte...