isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXTH52N65X
·FEATURES ·With low gate drive requirements ·Easy to...
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IXTH52N65X
·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGSS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
52
A
IDM
Drain Current-Single Pulsed
104
A
PD
Total Dissipation
660
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(ch-c) Channel-to-case thermal resistance 0.19
℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IXTH52N65X
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 250uA
650
V
VGS(th)
Gate Threshold Voltage
VDS=±30V; ID= 250uA
3
5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 26A
68
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward voltage
VGS= ±30V;VDS= 0V
VDS= 650V; VGS= 0V;@Tc=25℃ Tc=125℃
ISD=52A, VGS = 0 V
±100 nA
10 100
μA
1.4
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information containe...
