IXTH64N10L2

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 32mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Current Regulators ·Solid State Circuit Breakers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 64 A IDM Drain Current-Single Pulsed 140 A PD Total Dissipation @TC=25℃ 357 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Junction-to-case resistance thermal 0.35 ℃/W IXTH64N10L2 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTH64N10L2 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA 100 V VGS(th) Gate Threshold Voltage VDS=VGS; ID = 250μA 2.5 4.5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID= 32A 32 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V ±100 nA IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 125℃ IF= 64A; VGS = 0V 5 μA 25 1.4 V NOTICE： ISC reserves the rights to make changes of the content herein the datashee...