IXTH75N10

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 25mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 75 A IDM Drain Current-Single Plused 300 A PD Total Dissipation @TC=25℃ 300 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.42 UNIT ℃/W IXTH75N10 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTH75N10 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250uA 100 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 250uA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 33.5A 25 mΩ IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Diode Forward On-voltage VGS= ±20V;VDS= 0 VDS=80V; VGS= 0 VDS=80V; VGS= 0;TJ=125℃ IF= 67A ;VGS= 0 ±100 nA 200 1000 µA 1.75 V NOTICE： ISC reserves the rig...