isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 32mΩ@VGS=10V ·Fully characteriz...
isc N-Channel MOSFET
Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 32mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
80
A
IDM
Drain Current-Single Pulsed
340
A
PD
Total Dissipation @TC=25℃
520
W
Tj
Operating Junction Temperature
-55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c) Junction-to-case thermal resistance
0.24
℃/W
IXTH80N20L
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID = 250μA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID = 250μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 40A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS=0V
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 125℃
IF= 80A; VGS = 0V
IXTH80N20L
MIN MAX UNIT
200
V
2
4
V
32
mΩ
±100 nA
25 μA
250
1.5
V
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