isc N-Channel MOSFET Transistor
FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 24mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATION ·Designed for use in switch mode power supplies and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDSS
...
