IXTH180N10T

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.4mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Speed Power Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 180 A IDM Drain Current-Single Pulsed 450 A PD Total Dissipation @TC=25℃ 480 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX Rth(j-c) Junction-to-case thermal resistance 0.31 UNIT ℃/W IXTH180N10T isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTH180N10T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS= 0V; ID = 250μA 100 V VGS(th) Gate Threshold Voltage VDS= VGS; ID = 250μA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID= 25A 6.4 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V ±100 nA IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 150℃ IF= 25A; VGS = 0V 5 μA 100 0.95 V NOTICE： ISC reserves the rights to make changes of the content her...