isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 3.6mΩ@VGS=10V ·Fully characteri...
isc N-Channel MOSFET
Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 3.6mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converters ·High Current Switching Applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
55
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
240
A
IDM
Drain Current-Single Pulsed
650
A
PD
Total Dissipation @TC=25℃
480
W
Tj
Operating Junction Temperature
-55~175
℃
Tstg
Storage Temperature
-55~175
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth(j-c) Junction-to-case thermal resistance
0.31
℃/W
IXTH240N055T
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID = 250μA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID = 250μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 25A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS=0V
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 150℃
IF= 50A; VGS = 0V
IXTH240N055T
MIN MAX UNIT
55
V
2.0
4.0
V
3.6
mΩ
±200
nA
5 μA
250
1.2
V
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