IXTQ130N15T

Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH130N15T IXTQ130N15T V= DSS ID25 = RDS(on) ≤ 150 130 12 V A mΩ TO-247 (IXTH) Symbol VDSS V DGR V GSM ID25 ILRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C T J = 25°C to 175°C; R GS = 1 MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS TJ ≤ 175°C, RG = 2.5 Ω TC = 25°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds Mounting torque TO-3P TO-247 Maximum Ratings 150 V 150 V ± 30 V 130 A 75 A 330 A 5 A 1.2 J 3 V/ns G D S TO-3P (IXTQ) G D S (TAB) (TAB) 750 -55 ... +175 175 -55 ... +175 W G = Gate S = Source D = Drain TAB = Drain °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 5.5 g 6 g Features z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z 175 °C Operating Temperature Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA Characteristic Values Min. Typ. Max. 150 V VGS(th) VDS = VGS, ID = 1 mA 2.5 4.5 V IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA I DSS V =V DS DSS VGS = 0 V TJ = 150°C 5 μA 250 μA RDS(on) VGS = 10 V, ID = 0.5 ID25, Notes 1, 2 10 12 mΩ Advantages z Easy to mount z Space savings z High power density © 2007 IXYS CORPORATION, All rights reserved DS99796 (0...