Power MOSFET. IXTH140N075L2 Datasheet

IXTH140N075L2 MOSFET. Datasheet pdf. Equivalent


Part IXTH140N075L2
Description Power MOSFET
Feature Preliminary Technical Information LinearL2TM Power MOSFET w/Extended FBSOA N-Channel Enhancement Mo.
Manufacture IXYS
Datasheet
Download IXTH140N075L2 Datasheet


isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-sou IXTH140N075L2 Datasheet
Preliminary Technical Information LinearL2TM Power MOSFET w IXTH140N075L2 Datasheet
Recommendation Recommendation Datasheet IXTH140N075L2 Datasheet




IXTH140N075L2
Preliminary Technical Information
LinearL2TM Power
MOSFET w/Extended
FBSOA
N-Channel Enhancement Mode
Avalanche Rated
IXTT140N075L2HV
IXTH140N075L2
VDSS = 75V
ID25 = 140A
RDS(on) < 11m
TO-268HV (IXTT)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-247)
TO-268HV
TO-247
Maximum Ratings
75
V
75
V
20
V
30
V
140
A
500
A
140
A
1.5
J
540
W
-55...+150
150
-55...+150
 C
 C
 C
300
°C
260
°C
1.13/10
Nm/lb.in
4
g
6
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
75
V
2.0
4.5 V
100 nA
5 A
25 A
11 m
G
S
D (Tab)
TO-247 (IXTH)
G
D
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
Designed for Linear Operation
International Standard Packages
AvalancheRated
Guaranteed FBSOA at 75C
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Solid State Circuit Breakers
Soft Start Controls
Linear Amplifiers
Programmable Loads
Current Regulators
© 2017 IXYS CORPORATION, All rights reserved
DS100774A(5/17)



IXTH140N075L2
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 60A, Note 1
RGi
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Gate Input Resistance
VGS = 0V, VDS = 25V, f = 1MHz
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2(External)
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
TO-247
Characteristic Values
Min. Typ. Max.
50
65
80 S
1.24
9300
2190
750
26
83
100
33
275
40
108
0.21
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.23 C/W
     C/W
Safe Operating Area Specification
Symbol
Test Conditions
SOA
VDS = 75V, ID = 4.35A, TC = 75C, Tp = 5s
Characteristic Values
Min. Typ. Max.
326
W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, pulse width limited by TJM
VSD
IF = 100A, VGS = 0V, Note 1
trr
IRM
QRM
IF = 70A, -di/dt = 100A/s,
VR = 37.5V, VGS = 0V
Note: 1. Pulse test, t 300s; duty cycle, d  2%.
Characteristic Values
Min. Typ. Max.
140 A
560 A
1.4 V
200
ns
14.0
A
1.4
μC
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXTT140N075L2HV
IXTH140N075L2
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537







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