Power MOSFET. IXTP270N04T4 Datasheet

IXTP270N04T4 MOSFET. Datasheet pdf. Equivalent


Part IXTP270N04T4
Description Power MOSFET
Feature Preliminary Technical Information TrenchT4TM Power MOSFET IXTP270N04T4 IXTH270N04T4 N-Channel Enh.
Manufacture IXYS
Datasheet
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Recommendation Recommendation Datasheet IXTP270N04T4 Datasheet




IXTP270N04T4
Preliminary Technical Information
TrenchT4TM
Power MOSFET
IXTP270N04T4
IXTH270N04T4
N-Channel Enhancement Mode
Avalanche Rated
VDSS =
ID25 =
RDS(on)
40V
270A
2.4m
TO-220AB (IXTP)
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 175C
TJ = 25C to 175C, RGS = 1M
Transient
TC = 25C
Lead Current Limit, RMS
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
TC = 25C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
TO-220
TO-247
Maximum Ratings
40
V
40
V
15
V
270
A
160
A
800
A
135
A
750
mJ
270
A
350
mJ
375
W
-55 ... +175
175
-55 ... +175
 C
 C
 C
300
°C
260
°C
1.13 / 10
Nm/lb.in
3
g
6
g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250A
VGS(th)
VDS = VGS, ID = 250A
IGSS
VGS = 15V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 150C
RDS(on)
VGS = 10V, ID = 50A, Note 1
Characteristic Values
Min. Typ. Max.
40
V
2.0
4.0 V
            200 nA
5 A
750  A
2.4 m
GD S
TO-247 (IXTH)
D (Tab)
G
D
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Synchronous Buck Converters
High Current Switching Power
Supplies
Battery Powered Electric Motors
Resonant-Mode Power Supplies
Electronics Ballast Application
Class D Audio Amplifiers
© 2016 IXYS CORPORATION, All Rights Reserved
DS100671B(03/16)



IXTP270N04T4
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 60A, Note 1
RGi
Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 135A
RG = 2(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
TO-220
TO-247
Characteristic Values
Min. Typ. Max.
90
150
S
1.4
9140
pF
1450
pF
980
pF
18
ns
28
ns
72
ns
23
ns
182
nC
45
nC
67
nC
0.40 C/W
0.50
C/W
0.21
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse width limited by TJM
VSD
IF = 100A, VGS = 0V, Note 1
trr
IF = 150A, VGS = 0V
IRM
-di/dt = 100A/s
QRM
VR = 30V
Characteristic Values
Min. Typ. Max.
270 A
1080 A
1.4 V
48
ns
1.8
A
43
nC
IXTP270N04T4
IXTH270N04T4
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.
2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm
or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537







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