IXTV96N25T

Preliminary Technical Information TrenchHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH96N25T IXTQ96N25T IXTV96N25T VDSS = ID25 = RDS(on) ≤ 250V 96A 29mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 I LRMS IDM IAS EAS PD TJ TJM Tstg TL TSOLD Md F C Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247 & TO-3P) Mounting force (PLUS220) TO-247 TO-3P PLUS220 Maximum Ratings 250 V 250 V ± 30 V 96 A 75 A 250 A 5 A 2 J 625 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 11..65 / 2.5..14.6 N/lb. 6.0 g 5.5 g 4.0 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 20V, VDS = 0V I DSS V =V DS DSS VGS = 0V TJ = 125°C R DS(on) V GS = 10V, I D = 0.5 I, D25 Notes 1, 2 Characteristic Values Min. Typ. Max. 250 V 3 5V ± 200 nA 5 μA 250 μA 29 mΩ © 2007 IXYS CORPORATION, All rights reserved G D S TO-3P (IXTQ) (TAB) G D S PLUS220 (IXTV) (TAB) G D S G = Gate S = Source D = Drain TAB = Drain (TAB) Features z International standard packages z Avalanche rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power densi...