Power MOSFET
Advance Technical Information
LinearL2TM Power MOSFET w/ Extended FBSOA
IXTH110N10L2 IXTT110N10L2
VDSS = 100V
ID25 = ...
Description
Advance Technical Information
LinearL2TM Power MOSFET w/ Extended FBSOA
IXTH110N10L2 IXTT110N10L2
VDSS = 100V
ID25 = 110A ≤ RDS(on) 18mΩ
N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated
TO-247 (IXTH)
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268
Maximum Ratings
100
V
100
V
±20
V
±30
V
110
A
300
A
110
A
3
J
600
W
-55 to +150
°C
+150
°C
-55 to +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
6.0
g
4.0
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
100
V
2.5
4.5 V
±100 nA
5 μA 50 μA
18 mΩ
G DS
D (Tab)
TO-268 (IXTT)
G S D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z Designed for Linear Operation z International Standard Packages z Avalanche Rated z Integrated Gate Resistor for Easy
Paralleling z Guaranteed FBSOA at 75°C
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z Solid State Circuit Breakers z Soft Start Controls z Linear Amplifiers z Programmable Loads z Current...
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