Document
Preliminary Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH86N25T IXTQ86N25T IXTV86N25T
VDSS = ID25 =
RDS(on) ≤
250V 86A 37mΩ
TO-247 (IXTH)
Symbol
VDSS VDGR
VGSM
ID25 I
LRMS
IDM
IAS EAS
PD
TJ TJM Tstg
TL TSOLD
Md
F C
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247 & TO-3P) Mounting force (PLUS220) TO-247 TO-3P PLUS220
Maximum Ratings
250
V
250
V
± 30
V
86
A
75
A
190
A
10
A
1.5
J
540
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
11..65 / 2.5..14.6
N/lb.
6.0
g
5.5
g
4.0
g
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS
VGS = ± 20V, VDS = 0V
I
DSS
V =V
DS
DSS
VGS = 0V
TJ = 125°C
R DS(on)
V GS
=
10V,
I
D
=
0.5
•
I,
D25
Notes
1,
2
Characteristic Values Min. Typ. Max.
250
V
3
5V
± 200 nA
3 μA 250 μA
37 mΩ
© 2007 IXYS CORPORATION, All rights reserved
G D S
TO-3P (IXTQ)
(TAB
G D S
PLUS220 (IXTV)
(TAB)
G D S
G = Gate S = Source Features
(TAB)
D = Drain TAB = Drain
z International standard packages z Avalanche rated z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount z Space savings z High power density
Applications
z DC-DC converters z Battery chargers z Switched-mode and resonant-mode
power supplies z DC choppers z AC motor control z Uninterruptible power supplies
DS99784A(10/07)
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
g fs
V DS
=
10V,
I D
=
0.5
•
I,
D25
Note
1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3Ω (External)
Q g(on)
Qgs Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A
RthJC RthCS
Characteristic Values Min. Typ. Max.
45
76
S
5330
pF
515
pF
92
pF
22
ns
28
ns
55
ns
25
ns
105
nC
32
nC
28
nC
0.23 °C/W
0.25
°C/W
Source-Drain Diode
Symbol
Test Conditions
T = 25°C unless otherwise specified) J
I
V = 0V
S
GS
ISM
Repetitive, pulse width limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr IRM
IF = 43A, -di/dt = 250A/μs VR = 100V, VGS = 0V
QRM
Characteristic Values Min. Typ. Max.
86 A
172 A
1.5 V
156
ns
21
A
1.7
μC
Notes: 1. Pulse test, t ≤ 300ms; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body.
PLUS220 (IXTV) Outline
IXTH86N25T IXTQ86N25T IXTV86N25T
TO-247AD Outline
123
Terminals: 1 - Gate 3 - Source
Dim. Millimeter Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13 b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
ÆP 3.55 3.65 Q 5.89 6.40
R 4.32 5.49 S 6.15 BSC
2 - Drain Tab - Drain
Inches Min. Max.
.185 .209 .087 .102 .059 .098
.040 .055 .065 .084 .113 .123
.016 .031 .819 .845 .610 .640
0.205 0.225 .780 .800 .177
.140 .144 0.232 0.252
.170 .216 242 BSC
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
ID - Amperes
ID - Amperes
Fig. 1. Output Characteristics @ 25ºC
90
VGS = 10V
80
8V
7V
70
60
50
6V
40
30
20
10
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
VDS - Volts
Fig. 3. Output Characteristics @ 125ºC
90
VGS = 10V
80
8V
7V
70
60 6V
50
40
30
20 5V
10
0
0
1
2
3
4
5
6
7
8
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 43A Value vs. Drain Current
4.0
VGS = 10V 3.5
TJ = 125ºC
3.0 2.5
2.0
1.5
TJ = 25ºC
1.0
0.5 0
20 40 60 80 100 120 140 160 180 200 ID - Amperes
RDS(on) - Normalized
© 2007 IXYS CORPORATION, All rights reserved
ID - Amperes
RDS(on) - Normalized
ID - Amperes
IXTH86N25T IXTQ86N25T IXTV86N25T
200 180 160 140 120 100
80 60 40 20
0 0
Fig. 2. Extended Output Characteristics @ 25ºC
VGS = 10V 8V 7V
6V
5V 2 .