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IXTH86N25T Dataheets PDF



Part Number IXTH86N25T
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTH86N25T DatasheetIXTH86N25T Datasheet (PDF)

Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH86N25T IXTQ86N25T IXTV86N25T VDSS = ID25 = RDS(on) ≤ 250V 86A 37mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 I LRMS IDM IAS EAS PD TJ TJM Tstg TL TSOLD Md F C Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic b.

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Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH86N25T IXTQ86N25T IXTV86N25T VDSS = ID25 = RDS(on) ≤ 250V 86A 37mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSM ID25 I LRMS IDM IAS EAS PD TJ TJM Tstg TL TSOLD Md F C Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-247 & TO-3P) Mounting force (PLUS220) TO-247 TO-3P PLUS220 Maximum Ratings 250 V 250 V ± 30 V 86 A 75 A 190 A 10 A 1.5 J 540 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 11..65 / 2.5..14.6 N/lb. 6.0 g 5.5 g 4.0 g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 20V, VDS = 0V I DSS V =V DS DSS VGS = 0V TJ = 125°C R DS(on) V GS = 10V, I D = 0.5 • I, D25 Notes 1, 2 Characteristic Values Min. Typ. Max. 250 V 3 5V ± 200 nA 3 μA 250 μA 37 mΩ © 2007 IXYS CORPORATION, All rights reserved G D S TO-3P (IXTQ) (TAB G D S PLUS220 (IXTV) (TAB) G D S G = Gate S = Source Features (TAB) D = Drain TAB = Drain z International standard packages z Avalanche rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density Applications z DC-DC converters z Battery chargers z Switched-mode and resonant-mode power supplies z DC choppers z AC motor control z Uninterruptible power supplies DS99784A(10/07) Symbol Test Conditions (TJ = 25°C unless otherwise specified) g fs V DS = 10V, I D = 0.5 • I, D25 Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 3.3Ω (External) Q g(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 25A RthJC RthCS Characteristic Values Min. Typ. Max. 45 76 S 5330 pF 515 pF 92 pF 22 ns 28 ns 55 ns 25 ns 105 nC 32 nC 28 nC 0.23 °C/W 0.25 °C/W Source-Drain Diode Symbol Test Conditions T = 25°C unless otherwise specified) J I V = 0V S GS ISM Repetitive, pulse width limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IRM IF = 43A, -di/dt = 250A/μs VR = 100V, VGS = 0V QRM Characteristic Values Min. Typ. Max. 86 A 172 A 1.5 V 156 ns 21 A 1.7 μC Notes: 1. Pulse test, t ≤ 300ms; duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. PLUS220 (IXTV) Outline IXTH86N25T IXTQ86N25T IXTV86N25T TO-247AD Outline 123 Terminals: 1 - Gate 3 - Source Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ÆP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Tab - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-3P (IXTQ) Outline Pins: 1 - Gate 2 - Drain 3 - Source 4, TAB - Drain PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or moreof the following U.S. patents: 4,850,072 5,017,508 4,881,106 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 ID - Amperes ID - Amperes Fig. 1. Output Characteristics @ 25ºC 90 VGS = 10V 80 8V 7V 70 60 50 6V 40 30 20 10 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 VDS - Volts Fig. 3. Output Characteristics @ 125ºC 90 VGS = 10V 80 8V 7V 70 60 6V 50 40 30 20 5V 10 0 0 1 2 3 4 5 6 7 8 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 43A Value vs. Drain Current 4.0 VGS = 10V 3.5 TJ = 125ºC 3.0 2.5 2.0 1.5 TJ = 25ºC 1.0 0.5 0 20 40 60 80 100 120 140 160 180 200 ID - Amperes RDS(on) - Normalized © 2007 IXYS CORPORATION, All rights reserved ID - Amperes RDS(on) - Normalized ID - Amperes IXTH86N25T IXTQ86N25T IXTV86N25T 200 180 160 140 120 100 80 60 40 20 0 0 Fig. 2. Extended Output Characteristics @ 25ºC VGS = 10V 8V 7V 6V 5V 2 .


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