Power MOSFET
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH300N04T2
VDS...
Description
Preliminary Technical Information
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH300N04T2
VDSS = ID25 =
RDS(on) ≤
40V 300A 2.5mΩ
TO-247
Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg TL Tsold
M d
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1, 2
Maximum Ratings
40
V
40
V
± 20
V
300
A
160
A
900
A
100
A
600
mJ
480
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
6
g
Characteristic Values Min. Typ. Max.
40
V
2.0
4.0 V
±200 nA
5 μA 150 μA
2.5 mΩ
G DS
(TAB)
G = Gate
D = Drain
S = Source TAB = Drain
Features
z International standard package z 175°C Operating Temperature z High current handling capability z Avalanche Rated z Low RDS(on)
Advantages
z Easy to mount z Space savings z High power density
Applications
Synchronous Buck Converters High Current Switching Power
Supplies
Battery Powered Electric Motors Resonant-mode power supplies Electronics Ballast Application Class D Audio Amplifiers
© 2008 IXYS CORPORATIO...
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