Power MOSFET. IXTH340N04T4 Datasheet

IXTH340N04T4 MOSFET. Datasheet pdf. Equivalent


Part IXTH340N04T4
Description Power MOSFET
Feature TrenchT4TM Power MOSFET Preliminary Technical Information IXTP340N04T4 IXTH340N04T4 VDSS = ID25 =.
Manufacture IXYS
Datasheet
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IXTH340N04T4
TrenchT4TM
Power MOSFET
Preliminary Technical Information
IXTP340N04T4
IXTH340N04T4
VDSS =
ID25 =
RDS(on)
40V
340A
1.9m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-220AB (IXTP)
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 175C
TJ = 25C to 175C, RGS = 1M
Transient
TC = 25C
Lead Current Limit, RMS
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
TC = 25C
TC = 25C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque
TO-220
TO-247
Maximum Ratings
40
V
40
V
15
V
340
A
160
A
700
A
170
A
1.2
J
340
A
500
mJ
480
W
-55 ... +175
175
-55 ... +175
 C
 C
 C
300
°C
260
°C
1.13 / 10
3
6
m/lb.in
g
g
GD S
TO-247 (IXTH)
D (Tab)
G
D
S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
Fast Intrinsic Rectifier
Low RDS(on)
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250A
VGS(th)
VDS = VGS, ID = 250A
IGSS
VGS = 15V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 150C
RDS(on)
VGS = 10V, ID = 100A, Notes 1, 2
Characteristic Values
Min. Typ. Max.
40
V
2.0
4.0 V
            200 nA
5 A
750 A
1.9 m
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
DC-DC Converters & Off-Line UPS
Primary-Side Switch
High Current Switching Applications
© 2016 IXYS CORPORATION, All Rights Reserved
DS100699B(03/16)



IXTH340N04T4
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 60A, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi
Gate Input Resistance
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
TO-220
TO-247
Characteristic Values
Min. Typ. Max.
110
180
S
13
nF
1850
pF
1226
pF
1.1
23
ns
55
ns
113
ns
40
ns
256
nC
64
nC
86
nC
0.31 C/W
0.50
C/W
0.21
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = 100A, VGS = 0V, Note 1
trr
IF = 150A, VGS = 0V,
IRM
-di/dt = 100A/s,
QRM
VR = 30V
Characteristic Values
Min. Typ. Max.
340 A
1360 A
1.4 V
43
ns
10
A
210
nC
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.
2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm
or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXTP340N04T4
IXTH340N04T4
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537







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