BCP56-16T1G

BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features High Current: 1.0 A The SOT−223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BCP56T1G to Order the 7 inch/1000 Unit Reel Use BCP56T3G to Order the 13 inch/4000 Unit Reel PNP Complement is BCP53T1G S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current Collector Current − Peak (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Derate above 25°C VCEO VCBO VEBO IC ICM PD 80 Vdc 100 Vdc 5 Vdc 1 Adc 2 Adc 1.5 W 12 mW/°C Operating and Storage Temperature Range TJ, Tstg − 65 to 150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient (surface mounted) RqJA 83.3 °C/W Maximum Temperature for Soldering Purposes Time in Solder Bath TL 260 °C 10 Sec Stresses exceeding those ...