isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
:...
isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 200V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 13mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·Robotics and Servo Controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
160
A
IDM
Drain Current-Single Plused
640
A
PD
Total Dissipation @TC=25℃
730
W
Tj
Max. Operating Junction Temperature
-55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance, Junction to Case
MAX 0.17
UNIT ℃/W
IXTK160N20
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
IXTK160N20
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID=1mA
200
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=500uA
2
4
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 80A
13 mΩ
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Diode Forward On-voltage
VGS= ±20V;VDS= 0
VDS=200V; VGS= 0 VDS=200V; VGS= 0;TJ=150℃
IF= 160A ;VGS= 0
±200 nA
50 3000
µA
1.5
...
