IXTA1N100

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1000 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.5 IDM Drain Current-Single Pulsed 6 PD Total Dissipation @TC=25℃ 54 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 2.31 UNIT ℃/W IXTA1N100 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID = 50μA RDS(on) Drain-Source On-Resistance VGS=10V; ID= 1A IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 125℃ IF=1.5A; VGS = 0V IXTP1N100 MIN MAX UNIT 1000 V 2.5 4.5 V 11 Ω ±100 nA 25 μA 500 1.8 V NOTICE： ISC reserves the rights to make changes of the content herein the datashee...