IXTP1R4N60P

isc N-Channel MOSFET Transistor IXTP1R4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 1.4 IDM Drain Current-Single Pulsed 2.1 PD Total Dissipation @TC=25℃ 50 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 2.5 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 25μA VGS(th) Gate Threshold Voltage VDS=VGS; ID = 25μA RDS(on) Drain-Source On-Resistance VGS=10V; ID= 0.7A IGSS Gate-Source Leakage Current VGS= ±30V;VDS=0V IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 125℃ IF= 1.4A; VGS = 0V IXTP1R4N60P MIN MAX UNIT 600 V 3.0 5.5 V 9.0 Ω ±50 nA 1 μA 20 1.5 V NOTICE： ISC reserves the rights to make changes of the con...