isc N-Channel MOSFET Transistor
IXTP2N80
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.2Ω@VGS=10V ·Fully c...
isc N-Channel MOSFET
Transistor
IXTP2N80
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 6.2Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
800
VGS
Gate-Source Voltage
±20
ID
Drain Current-Continuous
2
IDM
Drain Current-Single Pulsed
8
PD
Total Dissipation @TC=25℃
54
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Junction-to-case thermal resistance
MAX 2.31
UNIT ℃/W
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID = 250μA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID = 250μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 1A
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS=0V
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 125℃
IF= 2A; VGS = 0V
IXTP2N80
MIN MAX UNIT
800
V
2.5
5.5
V
6.2
Ω
±100
nA
25 μA
500
1.8
V
NOTICE: ISC reserves the rights to make changes of the c...