isc N-Channel MOSFET Transistor
IXTP7N60PM
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static drain-source on-...
isc N-Channel MOSFET
Transistor
IXTP7N60PM
·FEATURES ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static drain-source on-resistance
: RDS(on) ≤ 1.1Ω@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
4
IDM
Drain Current-Single Pulsed
14
PD
Total Dissipation @TC=25℃
41
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Junction-to-case thermal resistance
MAX 3
UNIT ℃/W
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID =250μA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID =250μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 3.5A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
VDS= 600V; VGS= 0V VDS= 600V; VGS= 0V;TJ=125℃
IF= 7A; VGS = 0V
IXTP7N60PM
MIN MAX UNIT
600
V
3
5.5
V
1.1
Ω
±100
nA
5 μA
50
1.5
V
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