isc N-Channel MOSFET Transistor
IXTP8N70X2M
·FEATURES ·High power dissipation ·Static drain-source on-resistance:
RDS(...
isc N-Channel MOSFET
Transistor
IXTP8N70X2M
·FEATURES ·High power dissipation ·Static drain-source on-resistance:
RDS(on) ≤ 550mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·DC/DC Converters ·AC and DC Motor Drives ·Switch-Mode and Resonant-Mode Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
700
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
8
IDM
Drain Current-Single Pulsed
16
PD
Total Dissipation @TC=25℃
32
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Junction-to-case thermal resistance
MAX 3.9
UNIT ℃/W
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isc N-Channel MOSFET
Transistor
IXTP8N70X2M
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID = 250μA
700
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID = 250μA
3
5
V
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 4A
550 mΩ
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
±100 nA
VDS= VDSS; VGS= 0V
IDSS
Drain-Source Leakage Current
VDS= VDSS; VGS= 0V;TJ= 125℃
10 μA
250
VSD
Diode forward voltage
IF= 8A; VGS = 0V
1.4
V
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