IXTP12N70X2M

isc N-Channel MOSFET Transistor IXTP12N70X2M ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·AC and DC Motor Drives ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 700 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 40 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 3.10 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTP12N70X2M ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA 700 V VGS(th) Gate Threshold Voltage VDS=VGS; ID = 250μA 2.5 4.5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID= 6A 300 mΩ IGSS Gate-Source Leakage Current VGS= ±30V;VDS=0V ±100 nA VDS= VDSS; VGS= 0V IDSS Drain-Source Leakage Current VDS= VDSS; VGS= 0V;TJ= 125℃ 5 μA 50 VSD Diode forward voltage IF= 12A; VGS = 0V 1.4 V NOTICE： ISC reserves the rights to make changes of the content herein the ...