N-Channel MOSFET. IXTP05N100M Datasheet

IXTP05N100M MOSFET. Datasheet pdf. Equivalent


Part IXTP05N100M
Description N-Channel MOSFET
Feature High Voltage MOSFET IXTP05N100M (Electrically Isolated Tab) VDSS = ID25 = RDS(on) ≤ 1000V 700mA 17.
Manufacture IXYS
Datasheet
Download IXTP05N100M Datasheet


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High Voltage MOSFET IXTP05N100M (Electrically Isolated Tab) IXTP05N100M Datasheet
Recommendation Recommendation Datasheet IXTP05N100M Datasheet




IXTP05N100M
High Voltage MOSFET IXTP05N100M
(Electrically Isolated Tab)
VDSS =
ID25 =
RDS(on)
1000V
700mA
17Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ =150°C
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Maximum Ratings
1000
V
1000
V
± 30
V
± 40
V
700
mA
3
A
1
A
100
mJ
3
V/ns
25
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
2.5
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS(th)
VGS = 0V, ID = 250μA
VDS = VGS, ID = 25μA
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 375mA, Note 1
Characteristic Values
Min. Typ. Max.
1000
2.5
V
4.5 V
±100 nA
25 μA
500 μA
15 17 Ω
OVERMOLDED TO-220
(IXTP...M) OUTLINE
G DS
Isolated Tab
G = Gate
S = Source
D = Drain
Features
Plastic overmolded tab for electrical
isolation
International standard package
Avalanche rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
© 2008 IXYS CORPORATION, All rights reserved
DS100014A(08/08)



IXTP05N100M
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
Test Conditions
VDS = 20V, ID = 500mA, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ. Max.
0.55
0.93
S
260
pF
22
pF
8
pF
Resistive Switching Times
VGS = 10V, VDS = 0.5 VDSS, ID = 1A
RG = 47Ω (External)
11
ns
19
ns
40
ns
28
ns
VGS= 10V, VDS = 0.5 VDSS, ID = 1A
7.8
nC
1.4
nC
4.1
nC
5.0 °C/W
IXTP05N100M
ISOLATED TO-220 (IXTP...M)
12 3
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0V
750 mA
ISM
Repetitive, pulse width limited by TJM
3A
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 750mA, -di/dt = 100A/μs,
VR = 100V, VGS = 0V
1.5 V
710
ns
Notes:1. Pulse test, t 300 μs; duty cycle, d 2 %.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537







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