Document
Preliminary Technical Information
X2-Class Power MOSFET
(Electrically Isolated Tab)
IXTP8N70X2M
VDSS =
ID25 = RDS(on)
700V 8A 550m
N-Channel Enhancement Mode
OVERMOLDED TO-220
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD VISOL
Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 50/60 Hz, 1 Minute Mounting Torque
Maximum Ratings
700
V
700
V
30
V
40
V
8
A
16
A
4
A
250
mJ
50
V/ns
32
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
2500
V~
1.13 / 10 2.5
Nm/lb.in g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 4A, Note 1
Characteristic Values Min. Typ. Max.
700
V
3.0
5.0 V
100 nA
10 A 250 A
550 m
G DS
Isolated Tab
G = Gate S = Source
D = Drain
Features
International Standard Package Plastic Overmolded Tab High Voltage Package Low RDS(ON) and QG Avalanche Rated 2500V~ Electrical Isolation Low Package Inductance
Advantages
High Power Density Easy to Mount Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls
© 2018 IXYS CORPORATION, All Rights Reserved
DS100755B(10/18)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 4A, Note 1
RGi
Gate Input Resistance
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er) Co(tr)
Effective Output Capacitance
Energy related Time related
VGS = 0V VDS = 0.8 • VDSS
td(on) tr td(off) tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 4A RG = 30 (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 4A
RthJC RthCS
Characteristic Values Min. Typ. Max
4.8
8.0
S
6
800
pF
495
pF
2.2
pF
43 129
24 28 53 24 12.0 3.1 4.4
0.50
pF pF
ns ns ns ns
nC nC nC 3.90 C/W C/W
IXTP8N70X2M
OVERMOLDED TO-220
(IXTP...M)
oP
123
Terminals: 1 - Gate 2 - Drain 3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr QRM IRM
IF = 4A, -di/dt = 100A/μs VR = 100V
Characteristic Values Min. Typ. Max
8A
32 A
1.4 V
200 1.65 16.3
ns μC
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123B1 6,306,728B1
6,404,065B1 6,534,343 6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537
ID - Amperes
ID - Amperes
Fig. 1. Output Characteristics @ TJ = 25oC
8
VGS = 10V
7
8V
7V
6 6V
5
4
3
2
1
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125oC
8
VGS = 10V
7
7V
6
6V
5
4
3
5V
2
1
4V
0
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 4A Value vs. Drain Current
4.5
4.0
VGS = 10V
3.5
TJ = 125oC
3.0
2.5
TJ = 25oC 2.0
1.5
1.0
0.5
0
2
4
6
8
10
12
14
16
18
ID - Amperes
BVDSS / VGS(th) - Normalized
RDS(on) - Normalized
ID - Amperes
IXTP8N70X2M
Fig. 2. Extended Output Characteristics @ TJ = 25oC
18
VGS = 10V
16
8V
14 7V
12
10
8
6 6V
4
2
5V
0
0
4
8
12
16
20
24
28
32
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 4A Value vs. Junction Temperature
4.0
3.5
VGS = 10V
3.0
2.5
I D = 8A
2.0
I D = 4A 1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1
BVDSS
1.0
0.9
0.8
VGS(th) 0.7
0.6 -60 -40 -20
0 20 40 60 80 100 120 140 160
TJ - Degrees Centigrade
RDS(on) - Normalized
© 2018 IXYS CORPORATION, All Rights Reserved
IXTP8N70X2M
ID - Amperes
Fig..