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IXTP8N70X2M Dataheets PDF



Part Number IXTP8N70X2M
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTP8N70X2M DatasheetIXTP8N70X2M Datasheet (PDF)

Preliminary Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N70X2M VDSS = ID25 =  RDS(on) 700V 8A 550m N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lea.

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Preliminary Technical Information X2-Class Power MOSFET (Electrically Isolated Tab) IXTP8N70X2M VDSS = ID25 =  RDS(on) 700V 8A 550m N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 50/60 Hz, 1 Minute Mounting Torque Maximum Ratings 700 V 700 V 30 V 40 V 8 A 16 A 4 A 250 mJ 50 V/ns 32 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 2500 V~ 1.13 / 10 2.5 Nm/lb.in g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 4A, Note 1 Characteristic Values Min. Typ. Max. 700 V 3.0 5.0 V 100 nA 10 A 250 A 550 m G DS Isolated Tab G = Gate S = Source D = Drain Features  International Standard Package  Plastic Overmolded Tab  High Voltage Package  Low RDS(ON) and QG  Avalanche Rated  2500V~ Electrical Isolation  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls © 2018 IXYS CORPORATION, All Rights Reserved DS100755B(10/18) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 4A, Note 1 RGi Gate Input Resistance Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Co(er) Co(tr) Effective Output Capacitance Energy related Time related VGS = 0V VDS = 0.8 • VDSS td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 4A RG = 30 (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 4A RthJC RthCS Characteristic Values Min. Typ. Max 4.8 8.0 S 6  800 pF 495 pF 2.2 pF 43 129 24 28 53 24 12.0 3.1 4.4 0.50 pF pF ns ns ns ns nC nC nC 3.90 C/W C/W IXTP8N70X2M OVERMOLDED TO-220 (IXTP...M) oP 123 Terminals: 1 - Gate 2 - Drain 3 - Source Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = 4A, -di/dt = 100A/μs VR = 100V Characteristic Values Min. Typ. Max 8A 32 A 1.4 V 200 1.65 16.3 ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508 4,881,106 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734B2 7,157,338B2 6,710,405B2 6,759,692 7,063,975B2 6,710,463 6,771,478B2 7,071,537 ID - Amperes ID - Amperes Fig. 1. Output Characteristics @ TJ = 25oC 8 VGS = 10V 7 8V 7V 6 6V 5 4 3 2 1 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC 8 VGS = 10V 7 7V 6 6V 5 4 3 5V 2 1 4V 0 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 4A Value vs. Drain Current 4.5 4.0 VGS = 10V 3.5 TJ = 125oC 3.0 2.5 TJ = 25oC 2.0 1.5 1.0 0.5 0 2 4 6 8 10 12 14 16 18 ID - Amperes BVDSS / VGS(th) - Normalized RDS(on) - Normalized ID - Amperes IXTP8N70X2M Fig. 2. Extended Output Characteristics @ TJ = 25oC 18 VGS = 10V 16 8V 14 7V 12 10 8 6 6V 4 2 5V 0 0 4 8 12 16 20 24 28 32 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 4A Value vs. Junction Temperature 4.0 3.5 VGS = 10V 3.0 2.5 I D = 8A 2.0 I D = 4A 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Normalized Breakdown & Threshold Voltages vs. Junction Temperature 1.3 1.2 1.1 BVDSS 1.0 0.9 0.8 VGS(th) 0.7 0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ - Degrees Centigrade RDS(on) - Normalized © 2018 IXYS CORPORATION, All Rights Reserved IXTP8N70X2M ID - Amperes Fig..


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