Power MOSFET. IXTP12N50PM Datasheet

IXTP12N50PM MOSFET. Datasheet pdf. Equivalent


Part IXTP12N50PM
Description Power MOSFET
Feature PolarTM Power MOSFET IXTP12N50PM (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Ra.
Manufacture IXYS
Datasheet
Download IXTP12N50PM Datasheet


isc N-Channel MOSFET Transistor IXTP12N50PM ·FEATURES ·Dra IXTP12N50PM Datasheet
PolarTM Power MOSFET IXTP12N50PM (Electrically Isolated Tab) IXTP12N50PM Datasheet
Recommendation Recommendation Datasheet IXTP12N50PM Datasheet




IXTP12N50PM
PolarTM Power MOSFET IXTP12N50PM
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ =150°C
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Maximum Ratings
500
V
500
V
± 30
V
± 40
V
6
A
30
A
12
A
600
mJ
10
V/ns
50
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
2.5
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS(th)
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 6A, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.5 V
±100 nA
5 μA
250 μA
500 mΩ
VDSS =
ID25 =
RDS(on)
trr
500V
6A
500mΩ
300ns
OVERMOLDED TO-220
(IXTP...M) OUTLINE
G DS
Isolated Tab
G = Gate
S = Source
D = Drain
Features
Plastic overmolded tab for electrical
isolation
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
© 2008 IXYS CORPORATION, All rights reserved
DS99448F(04/08)



IXTP12N50PM
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
Test Conditions
VDS= 10V, ID = 6A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ. Max.
7.5
13
S
1830
pF
182
pF
16
pF
VGS = 10V, VDS = 0.5 VDSS, ID = 6A
RG = 10Ω (External)
22
ns
27
ns
65
ns
20
ns
VGS= 10V, VDS = 0.5 VDSS, ID = 6A
29
nC
11
nC
10
nC
2.5 °C/W
IXTP12N50PM
ISOLATED TO-220 (IXTP...M)
12 3
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0V
12 A
ISM
Repetitive, pulse width limited by TJM
48 A
VSD
IF = IS, VGS = 0V, Note 1
1.5 V
trr
QRM
IRM
IF = 6A, -di/dt = 150A/μs,
VR = 100V, VGS = 0V
300 ns
2.8
μC
18.2
A
Notes:1. Pulse test, t 300 μs; duty cycle, d 2 %.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537







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