Power MOSFET. IXTP12N65X2M Datasheet

IXTP12N65X2M MOSFET. Datasheet pdf. Equivalent


Part IXTP12N65X2M
Description Power MOSFET
Feature X2-Class Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTP12N65X2M Symbol V.
Manufacture IXYS
Datasheet
Download IXTP12N65X2M Datasheet


isc N-Channel MOSFET Transistor IXTP12N65X2M ·FEATURES ·Hi IXTP12N65X2M Datasheet
X2-Class Power MOSFET (Electrically Isolated Tab) N-Channel IXTP12N65X2M Datasheet
Recommendation Recommendation Datasheet IXTP12N65X2M Datasheet




IXTP12N65X2M
X2-Class
Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
IXTP12N65X2M
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C, Limited by TJM
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
50/60 Hz, 1 Minute
Mounting Torque
Maximum Ratings
650
V
650
V
30
V
40
V
12
A
24
A
6
A
300
mJ
15
V/ns
40
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
2500
V~
1.13 / 10
2.5
Nm/lb.in
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 6A, Note 1
Characteristic Values
Min. Typ. Max.
650
V
2.5
4.5 V
100 nA
5 A
50 A
300 m
VDSS =
ID25 =
RDS(on)
650V
12A
300m
OVERMOLDED
TO-220
GDS
Isolated Tab
G = Gate
S = Source
D = Drain
Features
International Standard Package
Plastic Overmolded Tab
Low RDS(ON) and QG
Avalanche Rated
2500V~ Electrical Isolation
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
Robotics and Servo Controls
© 2018 IXYS CORPORATION, All Rights Reserved
DS100751D(10/18)



IXTP12N65X2M
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 6A, Note 1
RGi
Gate Input Resistance
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er)
Co(tr)
Effective Output Capacitance
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 6A
RG = 20(External)
VGS = 10V, VDS = 0.5 VDSS, ID = 6A
Characteristic Values
Min. Typ. Max
6.6
11.0
S
4.0
1100
pF
830
pF
1.5
pF
53
190
23
24
52
16
17.7
5.5
5.5
0.50
pF
pF
ns
ns
ns
ns
nC
nC
nC
3.10 C/W
C/W
IXTP12N65X2M
OVERMOLDED TO-220
(IXTP...M)
oP
123
Terminals: 1 - Gate
2 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 6A, -di/dt = 100A/μs
VR = 100V
Characteristic Values
Min. Typ. Max
12 A
48 A
1.4 V
270
2.5
18.5
ns
μC
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537







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