Power MOSFET
PolarHVTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTP...
Description
PolarHVTM Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTP14N60PM
VDSS = ID25 =
RDS(on) ≤
600V 7A 550mΩ
OVERMOLDED (IXTP...M) OUTLINE
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ =150°C TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque
Maximum Ratings
600
V
600
V
± 30
V
± 40
V
7
A
42
A
14
A
900
mJ
10
V/ns
75
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
2.5
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ±30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
RDS(on)
VGS = 10V, ID = 7A, Note 1
TJ = 125°C
Characteristic Values Min. Typ. Max.
600
V
3.0
5.5 V
±100 nA
5 μA 100 μA
550 mΩ
G DS
Isolated Tab
G = Gate S = Source
D = Drain
Features
Plastic overmolded tab for electrical isolation International standard package Avalanche rated Fast Intrinsic Diode Low package inductance
Advantages
Easy to mount Space savings
Applications:
Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls
© 2008 IXYS CORPORATION, All rights reserved
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