VSKH26-10

VSKH26/10 Thyristor/Diode Modules FEATURES ·High voltage ·Low gate current ·Low thermal resistance ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·power supplies ·Lighting circuits ·Temperature and motor speed control circuits ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VRRM Repetitive Peak Reverse Voltage IT(AV) Average Forward Current IT(RMS) ITSM I2t TJ Tstg VTM IDRM IRRM IGT VGT Viso RMS on-state current Surge Forward Current I2t for fusing Junction Temperature Storage Temperature Range Forward Voltage Drop peak reverse and off-state leakage current DC gate current required to trigger DC gate voltage required to trigger Isolated Voltage CONDITIONS TC=85℃, 180° conduction, half sine wave t=10ms,half sine wave VR=0.6VRRM ITM= 80A,TJ = 25℃ TJ = 125 ℃, rated VDRM/VRRM applied VA=12V,IA=1A,TJ = 25 ℃ 50Hz, R.M.S, t=1min, Iiso:1mA(MAX) THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MIN -40 -40 30 0.8 2500 MAX UNI T 1000 V 26 A 41 A 550 A 1500 A2s 125 ℃ 125 ℃ 1.69 V 8 mA 100 mA 2.5 V V MAX 0.95 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394“) VSKH26/10 Thyristor/Diode Modules NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applicatio...