N-Channel MOSFET. IXTP32N65XM Datasheet

IXTP32N65XM MOSFET. Datasheet pdf. Equivalent


Part IXTP32N65XM
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor IXTP32N65XM ·FEATURES ·High power dissipation ·Static drain-source.
Manufacture INCHANGE
Datasheet
Download IXTP32N65XM Datasheet


X-Class Power MOSFET (Electrically Isolated Tab) N-Channel E IXTP32N65XM Datasheet
isc N-Channel MOSFET Transistor IXTP32N65XM ·FEATURES ·Hig IXTP32N65XM Datasheet
Recommendation Recommendation Datasheet IXTP32N65XM Datasheet




IXTP32N65XM
isc N-Channel MOSFET Transistor
IXTP32N65XM
·FEATURES
·High power dissipation
·Static drain-source on-resistance:
RDS(on) ≤ 135m@VGS=10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converters
·AC and DC Motor Drives
·Switch-Mode and Resonant-Mode Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
14
IDM
Drain Current-Single Pulsed
64
PD
Total Dissipation @TC=25
78
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Junction-to-case thermal resistance
MAX
1.6
UNIT
/W
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IXTP32N65XM
isc N-Channel MOSFET Transistor
IXTP32N65XM
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID = 250μA
650
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID = 250μA
3
5.5
V
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 16A
135 mΩ
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
±100 nA
VDS= VDSS; VGS= 0V
IDSS
Drain-Source Leakage Current
VDS= VDSS; VGS= 0V;TJ= 125
5
μA
50
VSD
Diode forward voltage
IF= 32A; VGS = 0V
1.4
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark







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