1N1188AR

Silicon Standard Recovery Diode Features High Surge Capability Types up to 600 V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1183A thru 1N1190AR VRRM = 50 V - 600 V IF = 40 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1183A(R) 1N1184A(R) 1N1186A(R) 1N1188A(R) 1N1190A(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 150 °C 50 100 200 35 70 140 50 100 200 40 40 40 Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 °C, tp = 8.3 ms 800 800 800 400 600 V 280 420 V 400 600 V 40 40 A 800 800 A Operating temperature Tj Storage temperature Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1183A(R) 1N1184A(R) 1N1186A(R) 1N1188A(R) 1N1190A(R) Unit Diode forward voltage VF IF = 40 A, Tj = 25 °C 1.1 Reverse current IR VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 140 °C 10 15 Thermal characteristics Thermal resistance, junction case RthJC 1.25 1.1 10 15 1.25 1.1 10 15 1.25 1.1 1.1 V 10 10 μA 15 15 mA 1.25 1.25 °C/W Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recover...