Diode Rectifier
ND171N12K Diode Rectifier Modules
FEATURES ·Reduced RFI and EMI ·Reduced Snubbing ·Extensive Characterization of Recove...
Description
ND171N12K Diode Rectifier Modules
FEATURES ·Reduced RFI and EMI ·Reduced Snubbing ·Extensive Characterization of Recovery Parameters ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·These devices are ideally suited for power converters,
motors drives and other applications where switching losses are significant portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
CONDITIONS
VR
IF(AV) IFSM
Repetitive Peak Reverse Voltage tp=10ms
Average Forward Current
Single phase,haif-wave 180° condition,50Hz, TC=100℃
Surge Forward Current
tp=10ms, VR=VRRM
I2t
I2t for fusing
VR=0.6VRRM
Viso
Isolated Voltage
TJ
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
1200
V
171
A
8000
A
326*103
A2S
2500
V
-40~125
℃
-40~125
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.21
UNIT ℃/W
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ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
VFM
Forward Voltage drop
IR
Instantaneous Reverse Current
PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394“)
ND171N12K Diode Rectifier Modules
CONDITIONS IF= 500A, TJ= 125℃ VR=VRRM, TJ=125℃
MAX 1.26
8
UNIT V mA
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC product...
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