ND171N12K

ND171N12K Diode Rectifier Modules FEATURES ·Reduced RFI and EMI ·Reduced Snubbing ·Extensive Characterization of Recovery Parameters ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VR IF(AV) IFSM Repetitive Peak Reverse Voltage tp=10ms Average Forward Current Single phase,haif-wave 180° condition,50Hz, TC=100℃ Surge Forward Current tp=10ms, VR=VRRM I2t I2t for fusing VR=0.6VRRM Viso Isolated Voltage TJ Junction Temperature Tstg Storage Temperature Range VALUE UNIT 1200 V 171 A 8000 A 326*103 A2S 2500 V -40~125 ℃ -40~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.21 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER VFM Forward Voltage drop IR Instantaneous Reverse Current PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394“) ND171N12K Diode Rectifier Modules CONDITIONS IF= 500A, TJ= 125℃ VR=VRRM, TJ=125℃ MAX 1.26 8 UNIT V mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC product...