S8008R

isc Thyristors S8008R DESCRIPTION ·With TO-220 Non-isolated packaging ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) RMS on-state current ITSM Surge non-repetitive on-state current PG(AV) Tj Tstg Average gate power dissipation Operating junction temperature Storage temperature 50Hz 60Hz MIN 800 800 8 83 100 0.5 -40~125 -40~150 UNIT V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL IRRM IDRM VTM PARAMETER Repetitive peak reverse current Repetitive peak off-state current On-state voltage CONDITIONS VRM=VRRM VDM=VDRM Tj=25℃ Tj=100℃ Tj=125℃ ITM= 8A IGT Gate-trigger current VD = 12 V; RL=33Ω VGT Gate-trigger voltage VD = 12 V; RL=33Ω IH Holding current IGT= 0.2A MIN MAX UNIT 0.01 0.2 mA 0.5 1.6 V 1 15 mA 1.5 V 30 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications i...