Thyristor
isc Thyristors
INCHANGE Semiconductor
TYN610F
DESCRIPTION
·In a full package ,plastic envelope ·High surge capability ...
Description
isc Thyristors
INCHANGE Semiconductor
TYN610F
DESCRIPTION
·In a full package ,plastic envelope ·High surge capability ·High state current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·The TYN610F is designed for power supplies up to 400Hz
on resistive or inductive load
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MIN
UNIT
VDRM Repetitive peak off-state voltage
600
V
VRRM Repetitive peak reverse voltage
600
V
IT(RMS) RMS On-state current Tc=100℃
10
A
IT(AV) On-state current Tc=100℃
6.4
ITSM
Surge non-repetitive on-state current Tp=10ms
100
Repetitive rate of rise of on-state
di/dt current after triggering
50
Tj=125℃
I2t
I2t for fusing t = 10 ms
50
A A A/us A2S
Tj
Operating Junction temperature
125
℃
Tstg Storage temperature
-40 ~+150 ℃
isc website:www.iscsemi.com
1
isc & iscsemi is registered trademark
isc Thyristors
INCHANGE Semiconductor
TYN610F
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP. MAX
UNIT
IRRM Repetitive peak reverse current
VRR=600V, Tj=25℃
0.01 mA
IDRM Repetitive peak off-state current
VDR=600V, Tj=25℃
0.01 mA
VTM On-state voltage
IGT
Gate-trigger current
VGT Gate-trigger voltage
IH
Holding current
IL
Latching current
ITM= 20A VD=12V; RL=33Ω VD=12V; RL=33Ω IT=0.1A IG=1.2IGT
1.6 V 15 mA 1.5 V 30 mA 50 mA
isc website:www.iscsemi.com
2
isc & iscsemi is registered trad...
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