MBR4050PT

Schottky Barrier Rectifier FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage ,high frequency inverters,free wheeling and polarity protection applications. MBR4050PT ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions IRRM Peak Repetitive Reverse Surge Current (20μs, 1.0kHz) TJ Junction Temperature Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case VALUE UNIT 50 V 40 A 400 A 1.0 A -65~150 ℃ -65~175 ℃ MAX 1.2 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier MBR4050PT ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS IF= 20A ; Tc= 25℃ VF Maximum Instantaneous Forward Voltage IF= 20A ; Tc= 125℃ VR= VRWM;Tc= 25℃ IR Maximum Instantaneous Reverse Current VR= VRWM;Tc= 125℃ Outline package MAX 0.72 0.62 1 100 UNIT V mA NOTICE： ISC res...