MBRB1060

Schottky Barrier Rectifier FEATURES ·Schottky Barrier Chip ·Low Power Loss/High Efficiency ·High Surge Capability ·High Current Capability，Low Forward Voltage Drop ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage 60 V IF(AV) Average Rectified Forward Current 10 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 150 A wave, single phase, 60Hz) TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2 ℃/W MBRB1060 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier MBRB1060 ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS MAX IF= 10A ; TJ= 25℃ VF Maximum Instantaneous Forward Voltage IF= 10A ; TJ= 125℃ IF= 20A ; TJ= 25℃ IF= 20A ; TJ= 125℃ IR Maximum Instantaneous Reverse Current VR=VRRM, TJ= 25℃ VR=VRRM, TJ= 125℃ 0.80 0.70 0.95 0.85 0.10 15 UNIT V mA NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applicati...