Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRS1035
FEATURES ·Schottky barrier chip ·Low Power Loss/High Effici...
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRS1035
FEATURES ·
Schottky barrier chip ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Low Forward Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For use in high frequency rectifier of switching mode
Power supplies, freewheeling diodes, DC-to-DC converters Or polarity protection application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
35
V
IF(AV)
Average Rectified Forward Current
10
A
IFSM
Non-repetitive Peak Surge Current 8.3 ms Single Half Sine-wave Superimposed
120
A
on Rated Load
TJ
Junction Temperature
-65~175 ℃
Tstg
Storage Temperature Range
-65~175 ℃
isc website：www.isc.com
isc &1 iscsemi is registered trademark
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRS1035
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX 2.0
UNIT ℃/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
IF= 10A ; Tj=125℃
VF
Maximum Voltage
Instantaneous
Forward IF= 20A ; Tj=25℃
IF= 20A ; Tj=125℃
IR
Maximum Current
Instantaneous
Reverse
VR= VRWM, Tj= 25℃ VR= VRWM, Tj= 125℃
TYP
MAX
UNIT
0.57
0.84
V
0.72
100
μA
15
mA
isc website：www.iscsemi.com
2 isc & iscsemi is registered trademark
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