Schottky Barrier Rectifier
FEATURES ·Schottky Barrier Chip ·Low Power Loss/High Efficiency ·High Surge Capability ·High...
Schottky Barrier Rectifier
FEATURES ·
Schottky Barrier Chip ·Low Power Loss/High Efficiency ·High Surge Capability ·High Current Capability,Low Forward Voltage Drop ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM Peak Repetitive Reverse Voltage
40
V
IF(AV) IFSM TJ
Average Rectified Forward Current
10
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
Junction Temperature
-50~150 ℃
Tstg
Storage Temperature Range
-50~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.5
℃/W
SK1040D2
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
SK1040D2
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)
SYMBOL
PARAMETER
CONDITIONS
MAX
VF
Maximum Instantaneous Forward Voltage IF= 5A IF= 10A
IR
Maximum Instantaneous Reverse Current
VR=VRRM, TC= 25℃ VR=VRRM, TC= 100℃
0.51 0.55
0.31 45
UNIT V mA
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general ele...